Factory Lead Time  

4 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-3P-3 Full Pack

Weight  

6.962g

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

9.6A Tc

Number of Elements  

1

Power Dissipation (Max)  

96W Tc

Turn Off Delay Time  

260 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE, NOT REC (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

96W

Case Connection  

ISOLATED

Turn On Delay Time  

45 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

390m Ω @ 4.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

113nC @ 10V

Rise Time  

130ns

Vgs (Max)  

±30V

Fall Time (Typ)  

125 ns

Continuous Drain Current (ID)  

9.6A

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.39Ohm

Drain to Source Breakdown Voltage  

500V

Pulsed Drain Current-Max (IDM)  

38.4A

Avalanche Energy Rating (Eas)  

990 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant